STW20NC50 TRANSISTOR IGBT 500V 18.4A 0.22 ohm 220W S.THOMSON

anufacturer:	STMicroelectronics
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	500 V
Id – Continuous Drain Current:	18.4 A
Rds On – Drain-Source Resistance:	270 mOhms
Vgs – Gate-Source Voltage:	– 30 V, + 30 V
Minimum Operating Temperature:	– 65 C
Maximum Operating Temperature:	+ 150 C
Pd – Power Dissipation:	220 W
Channel Mode:	Enhancement
Series:	MDmesh K5
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	21 ns
Height:	20.15 mm
Length:	15.75 mm
Product Type:	MOSFET
Rise Time:	21 ns
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-On Delay Time:	29 ns