4N60B MOSFET N-CHANNEL 600V / 3.6A

Type Designator: FTA04N60B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 22 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 39 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO220F