IRF614 MOSFET N-CHANNEL 250V / 2.7A

Type Designator: IRF614

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 36 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.2(max) nC

Rise Time (tr): 7.6 nS

Drain-Source Capacitance (Cd): 42 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm