Type Designator: BSM75GB170DN2
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 625
Maximum Collector-Emitter Voltage |Vce|, V: 1700
Collector-Emitter saturation Voltage |Vcesat|, V: 3.4
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 110
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 150
Maximum Collector Capacity (Cc), pF: 1000
Package: MODULE
,%20W:%20625%20Maximum%20Collector-Emitter%20Voltage%20|Vce|,%20V:%201700%20Collector-Emitter%20saturation%20Voltage%20|Vcesat|,%20V:%203.4%20Maximum%20Gate-Emitter%20Voltage%20|Veg|,%20V:%2020%20Maximum%20Collector%20Current%20|Ic|,%20A:%20110%20Maximum%20Junction%20Temperature%20(Tj),%20°C:%20150%20Rise%20Time,%20nS:%20150%20Maximum%20Collector%20Capacity%20(Cc),%20pF:%201000%20Package:%20%5B…%5D&media=https://powerlab.dz/wp-content/uploads/2023/03/download-2023-03-11T160857.976-1.jpg){kind=link}