Type Designator: IRF720A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 49 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Package: TO220