2N7000 MOSFET N-CHANNEL 60V 350mA 1W

Type Designator: 2N7000

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 18 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 0.35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.4 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO92