SPB21N50C3 MOSFET N-CHANNEL 560V / 21A DEPACK

Type Designator: SPW21N50C3

Marking Code: 21N50C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 95 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 1200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO247