Type Designator: 2N3789
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3