Type Designator: 2N5636
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO128