2SK2675 MOSFET N-CHANNEL 900V / 7A

Type Designator: 2SK2675

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 63 nC

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: ITO3P