FEATURES
Low noise: 0.3 μV p-p at 0.1 Hz to 10 Hz
Low nonlinearity: 0.003% (G = 1)
High CMRR: 120 dB (G = 1000)
Low offset voltage: 50 μV
Low offset voltage drift: 0.5 μV/°C
Gain bandwidth product: 25 MHz
Pin programmable gains of 1, 10, 100, 1000
Input protection, power-on/power-off
No external components required
Internally compensated
MIL-STD-883B and chips available
16-lead ceramic DIP and SOIC packages and 20-terminal leadless chip carrier available
Available in tape and reel in accordance with EIA-481A standard
Standard military drawing also available
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