| VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 100 °C | 12 | A | ||
| IGT | gate trigger current | VD = 12 V; Tj = 25 °C | 15 | mA |
BT151U-650C THYRISTOR 12A 650V
د.ج 120,00
Disponibilité: 180 in stock
Description
Autres produits
-
Module Thyristor IRKT42/06
د.ج 7.500,00 -
IRKT162/12 Module THYRISTOR 1200V 160A
د.ج 12.600,00 -
C440B Module thyristor 1400A 200V
د.ج 26.500,00
%20RMS%20on-state%20current%20half%20sine%20wave; Tmb ≤ 100 °C%2012%20A%20IGT%20gate%20trigger%20current%20VD = 12 V; Tj = 25 °C%2015%20mA&media=https://powerlab.dz/wp-content/uploads/2023/03/download-2023-03-13T093930.086.jpg){kind=link}