Description:
Mitsubishi IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(70ns) Free Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150DY-12H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current IC 150 Amperes
Peak Collector Current ICM 300* Amperes
Diode Forward Current IF 150 Amperes
Diode Forward Surge Current IFM 300* Amperes
Power Dissipation Pd 600 Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 270 Grams
V Isolation VRMS 2500 Volts
