Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Basep
late for Easy
Heat Sinking
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM800DU-12H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 800 Amperes
Peak Collector Current ICM 1600* Amperes
Emitter Current** (Tc = 25°C) IE 800 Amperes
Peak Emitter Current** IEM 1600* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1500 Watts
Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
