FGH60N60UFD TRANSISTOR IGBT 600V 60A

DESCRIPTION :

Type Designator: FGH60N60UFD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 298

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Courant collecteur CC maximum (Ic) : 60,0A

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 58

Collector Capacity (Cc), typ, pF: 325

Total Gate Charge (Qg), typ, nC: 188

Package: TO247