Type Designator: FQP15P12
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 38 nC
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO220
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