FQPF20N60C MOSFET N-CANNEL 600V 20A

Type Designator: FQPF20N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 61 nC

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 273 pF

Maximum Drain-Source On-State Resistance (Rds): 0.37 Ohm

Package: TO220F