DESCRIPTION :
HIGH POWER SWITCHING APPLICATIONS
z Fourth generation IGBT
z FRD included between emitter and collector
z Enhancement mode type
z High speed IGBT : tf = 0.25µs (TYP.)
FRD : trr = 0.7µs (TYP.)
z Low saturation voltage : VCE (sat) = 2.1V (TYP.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector−Emitter Voltage VCES 900 V
Gate−Emitter Voltage VGES ±25 V
DC IC 60
Collector Current
1ms ICP 120
A
DC IECF 15 Emitter−Collector
Foward Current 1ms IECFP 120
A
Collector Power Dissipation
(Tc = 25°C) PC 170 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55~150 °C
Screw Torque ― 0.8 N·m