DESCRIPTION :
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
• Enhancement mode type
• High speed : tf = 0.15 µs (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 950 V
Gate-emitter voltage VGES ±25 V
DC IC 60
Collector current
1ms ICP 120
A
DC IF 25
Diode forward current
Pulsed IFP 50
A
@ Tc = 100°C 76 Collector power
dissipation @ Tc = 25°C
PC
190
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance (IGBT) Rth (j-c) 0.66 °C/W
Thermal resistance (diode) Rth (j-c) 1.38 °C/W