IXTH50P085 MOSFET P-CHANNEL 85V 50A

Type Designator: IXTH50P085

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 180 nS

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO247