Type Designator: SSH22N50A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 278 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 182 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 465 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm