TLP350 DRIVER IGBT MOSFET OPTOCOUPLEUR ORIGINAL

DESCRIPTION :

The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an
integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.
• Peak output current : IO = ±2.5A (max)
• Guaranteed performance over temperature : −40 to 100°C
• Supply current : ICC = 2 mA (max)
• Power supply voltage: VCC = 15 to 30 V
• Threshold input current : IFLH = 5 mA (max)
• Switching time (tpLH/tpHL) : 500 ns (max)
• Common mode transient immunity : 15 kV/μs
• Isolation voltage : 3750 Vrms
• UL Recognized : UL1577,File No.E67349
• Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage : 6000V