Type Designator: 2SK2906-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 200 nS
Drain-Source Capacitance (Cd): 2100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm
Package: TO247