MJ1001 TR BIPOLAIRE 80V / 10A

Type Designator: MJ1001

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: –

Package: TO3