Type Designator: IXFL100N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 625 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 240 nC
Rise Time (tr): 200 nS
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