Type Designator: IXTM75N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 180 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO204
IXTM75N10 Transistor Equivalent Substitute – MOSFET Cross-Reference Search
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