SPP20N60S5 MOSFET N-CHANNEL 600V 20A

Type Designator: SPP20N60S5

Marking Code: 20N60S5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 79 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 1170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO220