Type Designator: 2SC3886A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Package: ISOWATT218