BFG198 TR BIPOLAIRE NPN 20V / 100mA / 8GHZ

Type Designator: BFG198

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 8000 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO251