BUV98AV TR BIPOLAIRE NPN 1000V / 30A

Type Designator: BUV98AV

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: –

Package: SOT227