Type Designator: BUZ32
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
:%2075%20W%20Maximum%20Drain-Source%20Voltage%20|Vds|:%20200%20V%20Maximum%20Gate-Source%20Voltage%20|Vgs|:%2020%20V%20Maximum%20Gate-Threshold%20Voltage%20|Vgs(th)|:%204%20V%20Maximum%20Drain%20Current%20|Id|:%209.5%20A%20Maximum%20Junction%20Temperature%20(Tj):%20150%20°C%20Maximum%20Drain-Source%20On-State%20Resistance%20(Rds):%200.4%20%5B…%5D&media=https://powerlab.dz/wp-content/uploads/2023/03/GE3TO220-40.webp){kind=link}