IRFS11N50A MOSFET N-CHANNEL 500V / 11A

Type Designator: IRFS11N50A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 52(max) nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 208 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO263