Description: RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB
Case Connection | EMITTER |
Collector-base Capacitance-Max | 85.0 pF |
Collector Current-Max (IC) | 6.0 A |
Collector-emitter Voltage-Max | 16.0 V |
Description: RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB
Case Connection | EMITTER |
Collector-base Capacitance-Max | 85.0 pF |
Collector Current-Max (IC) | 6.0 A |
Collector-emitter Voltage-Max | 16.0 V |
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