IXFN26N90 MOSFET N-CHANNEL 900V 26A

Type Designator: IXFN26N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 600 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 240 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: SOT227B